US 12,084,404 B2
High purity 2-naphthylacetonitrile and method for producing same
Masaki Nagahama, Chiyoda-ku (JP); Daiki Okado, Chiyoda-ku (JP); and Hirotsugu Taniike, Chiyoda-ku (JP)
Assigned to API CORPORATION, Chikujo-gun (JP)
Filed by API CORPORATION, Fukuoka (JP)
Filed on May 25, 2022, as Appl. No. 17/824,393.
Application 17/824,393 is a continuation of application No. 17/295,222, granted, now 11,643,386, previously published as PCT/JP2020/040413, filed on Oct. 28, 2020.
Claims priority of application No. 2019-196782 (JP), filed on Oct. 29, 2019.
Prior Publication US 2022/0281806 A1, Sep. 8, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C07C 255/33 (2006.01); C07C 253/22 (2006.01)
CPC C07C 253/22 (2013.01) [C07C 255/33 (2013.01)] 3 Claims
 
1. A high purity 2-naphthylacetonitrile having an HPLC purity of 2-naphthylacetonitrile of not less than 95 area %, comprising one or more kinds selected from the naphthalene compounds represented by the following formulas (a)-(i) as impurities in an amount greater than zero and a content of each naphthalene compound is as follows:
(a)

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 not more than 0.3 area %
(b)

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 not more than 0.1 area %
(c)

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 not more than 1 area %
(d)

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 not more than 0.1 area %
(e)

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 not more than 0.05 area %
(f)

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 not more than 0.05 area %
(g)

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 not more than 0.1 area %
(h)

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 not more than 0.05 area %
(i)

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 not more than 0.05 area %.