US 12,083,624 B2
Method of printing laser mark and method of producing laser-marked silicon wafer
Yoichiro Hirakawa, Tokyo (JP)
Assigned to SUMCO CORPORATION, Tokyo (JP)
Appl. No. 17/633,035
Filed by SUMCO CORPORATION, Tokyo (JP)
PCT Filed Jul. 6, 2020, PCT No. PCT/JP2020/026461
§ 371(c)(1), (2) Date Feb. 4, 2022,
PCT Pub. No. WO2021/024674, PCT Pub. Date Feb. 11, 2021.
Claims priority of application No. 2019-145410 (JP), filed on Aug. 7, 2019.
Prior Publication US 2022/0331906 A1, Oct. 20, 2022
Int. Cl. H01L 21/302 (2006.01); B23K 26/0622 (2014.01); B23K 26/18 (2006.01); B23K 26/352 (2014.01); H01L 21/02 (2006.01); B23K 101/00 (2006.01); B23K 101/40 (2006.01); H01L 23/544 (2006.01)
CPC B23K 26/3576 (2018.08) [B23K 26/0622 (2015.10); B23K 26/18 (2013.01); H01L 21/02013 (2013.01); H01L 21/02016 (2013.01); H01L 21/02019 (2013.01); B23K 2101/007 (2018.08); B23K 2101/40 (2018.08); H01L 23/544 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54433 (2013.01); H01L 2223/54493 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A method of producing a laser-marked silicon wafer, comprising:
printing a laser mark having a plurality of dots on a silicon wafer that is obtained by slicing a single crystal silicon ingot grown by a predetermined method and is subjected to beveling;
performing etching on at least a laser-mark printed region of the silicon wafer; and
performing polishing on both surfaces of the silicon wafer having been subjected to the etching, wherein
each of the plurality of dots is formed by using a laser light having a wavelength in an ultraviolet region,
each of the plurality of dots is formed by performing an irradiation with the laser light a plurality of times,
a number of pulses in each of the plurality of times of the irradiation with the laser light is 15,000 or more per second, and
an amount removed by etching is 0.5 μm or more and 1.5 μm or less per side.