US 11,756,796 B2
Techniques for improved low dielectric constant film processing
Rajesh Prasad, Lexington, MA (US); Martin Seamons, San Jose, CA (US); Shan Tang, Middleton, MA (US); Qi Gao, Wilmington, MA (US); Deven Raj Mittal, Middleton, MA (US); and Kyuha Shim, Andover, MA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on May 12, 2021, as Appl. No. 17/318,843.
Prior Publication US 2022/0367205 A1, Nov. 17, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 21/3115 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/31155 (2013.01) [H01L 21/0234 (2013.01); H01L 21/02126 (2013.01); H01L 21/02216 (2013.01); H01L 21/02321 (2013.01); H01L 21/31116 (2013.01)] 19 Claims
OG exemplary drawing
1. A method, comprising:
providing a substrate having a plurality of patterned features disposed directly on a first surface of the substrate, and a low dielectric constant layer disposed directly on and between the patterned features, the low dielectric constant layer characterized by a layer thickness;
heating the substrate to a substrate temperature in a range of 200° C. to 550° C.; and
directing an ion implant treatment to the low dielectric constant layer, while the substrate temperature is in the range of 200° C. to 550° C., wherein the ion implant treatment comprises:
implanting a low weight ion species, at an ion energy generating an implant depth equal to 40% to 175% of the layer thickness.