US 11,754,931 B2
Method for determining corrections for lithographic apparatus
Roy Werkman, Eindhoven (NL); David Frans Simon Deckers, Turnhout (BE); Simon Philip Spencer Hastings, San Jose, CA (US); Jeffrey Thomas Ziebarth, San Jose, CA (US); Samee Ur Rehman, Milpitas, CA (US); Davit Harutyunyan, San Jose, CA (US); Chenxi Lin, Newark, CA (US); and Yana Cheng, San Jose, CA (US)
Assigned to ASML NETHERLANDS B.V., Veldhoven (NL)
Appl. No. 17/603,870
Filed by ASML NETHERLANDS B.V., Veldhoven (NL)
PCT Filed Mar. 18, 2020, PCT No. PCT/EP2020/057401
§ 371(c)(1), (2) Date Oct. 14, 2021,
PCT Pub. No. WO2020/212057, PCT Pub. Date Oct. 22, 2020.
Claims priority of provisional application 62/865,415, filed on Jun. 24, 2019.
Claims priority of provisional application 62/834,618, filed on Apr. 16, 2019.
Prior Publication US 2022/0252988 A1, Aug. 11, 2022
Int. Cl. G03F 1/36 (2012.01); G03F 7/00 (2006.01)
CPC G03F 7/705 (2013.01) [G03F 1/36 (2013.01); G03F 7/70508 (2013.01); G03F 7/70616 (2013.01)] 20 Claims
OG exemplary drawing
1. A method for determining a correction for an apparatus used in a process of patterning substrates, the method comprising:
obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates;
obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and
determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model comprising at least a group-specific correction component and a common correction component,
wherein the model comprises one or more group-specific correction parameters and one or more common correction parameters, wherein the parameters are coefficients of base functions representing a spatial characteristic of the correction.