US 11,752,529 B2
Method for cleaning semiconductor wafers
Hui Wang, Fremont, CA (US); Fufa Chen, Cupertino, CA (US); Fuping Chen, Shanghai (CN); Jian Wang, Shanghai (CN); Xi Wang, Shanghai (CN); Xiaoyan Zhang, Shanghai (CN); Yinuo Jin, Shanghai (CN); Zhaowei Jia, Shanghai (CN); Liangzhi Xie, Shanghai (CN); Jun Wang, Shanghai (CN); and Xuejun Li, Shanghai (CN)
Assigned to ACM Research (Shanghai) Inc., Shanghai (CN)
Filed by ACM Research (Shanghai) Inc., Shanghai (CN)
Filed on Nov. 15, 2017, as Appl. No. 15/814,246.
Application 15/814,246 is a continuation in part of application No. PCT/CN2016/099303, filed on Sep. 19, 2016.
Application PCT/CN2016/099303 is a continuation in part of application No. PCT/CN2016/099428, filed on Jun. 20, 2016.
Application PCT/CN2016/099428 is a continuation in part of application No. PCT/CN2016/078510, filed on Apr. 6, 2016.
Application PCT/CN2016/078510 is a continuation in part of application No. PCT/CN2015/079342, filed on May 20, 2015.
Application PCT/CN2015/079342 is a continuation in part of application No. PCT/CN2015/079015, filed on May 15, 2015.
Prior Publication US 2018/0071795 A1, Mar. 15, 2018
Int. Cl. B08B 3/12 (2006.01); B06B 3/02 (2006.01); B06B 1/02 (2006.01); H01L 21/02 (2006.01); B06B 1/06 (2006.01); B06B 3/00 (2006.01); G08B 21/18 (2006.01); B08B 1/00 (2006.01); H01L 21/67 (2006.01); B08B 3/08 (2006.01); H01L 21/687 (2006.01)
CPC B08B 3/12 (2013.01) [B06B 1/0284 (2013.01); B06B 3/02 (2013.01); B08B 1/007 (2013.01); B08B 3/08 (2013.01); H01L 21/02052 (2013.01); H01L 21/67051 (2013.01); H01L 21/68764 (2013.01); B06B 1/0644 (2013.01); B06B 3/00 (2013.01); G08B 21/182 (2013.01)] 23 Claims
OG exemplary drawing
1. A method for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the method comprising:
delivering a cleaning liquid over a surface of the semiconductor wafer during a cleaning process; and
imparting sonic energy to the cleaning liquid from a sonic transducer during the cleaning process, wherein power is alternately supplied to the sonic transducer for a predetermined number of cycles at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, the first predetermined period of time and the second predetermined period of time consecutively following one another, wherein the predetermined number of cycles is determined based on a power density and the first frequency,
wherein at least one of the first and second predetermined periods of time, the first and second power levels, or the first and second frequencies are determined, such that a percentage of damaged features as a result of imparting the sonic energy is lower than a predetermined threshold.