US 12,414,424 B2
Monolithically integrated top-gate thin-film transistor and light-emitting diode and method of making
Seonki Kim, Fishkill, NY (US); and Amalkumar P. Ghosh, Hopewell Junction, NY (US)
Assigned to eMagin Corporation, Hopewell Junction, NY (US)
Filed by eMagin Corporation, Hopewell Junction, NY (US)
Filed on Jun. 27, 2022, as Appl. No. 17/850,301.
Claims priority of provisional application 63/215,776, filed on Jun. 28, 2021.
Prior Publication US 2022/0415966 A1, Dec. 29, 2022
Int. Cl. H10H 29/14 (2025.01)
CPC H10H 29/142 (2025.01) 12 Claims
OG exemplary drawing
 
1. A display comprising a first pixel that includes:
a first light-emitting diode (LED) that includes a first cathode and a first anode, wherein one of the first cathode and first anode includes a first surface;
a planarization layer having a second surface, wherein the second surface is substantially coplanar with the first surface; and
a first thin-film transistor (TFT) disposed on the first LED, wherein the first TFT includes a first source, a first drain, and a first gate that is distal to a substrate, and wherein one of the first source and first drain is disposed on and in direct physical contact with the first surface, and further wherein the other one of the first source and first drain is in direct physical contact with the second surface;
wherein the first LED and the first TFT are monolithically integrated on the substrate such that the one of the first cathode and first anode is directly electrically connected with the one of the first source and the first drain; and
wherein the TFT is disposed on the LED such that the layer structures of the TFT and LED are combined.