US 12,414,422 B2
Chip-scale package light emitting diode
Se Hee Oh, Ansan-si (KR); Jong Kyu Kim, Ansan-si (KR); and Joon Sub Lee, Ansan-si (KR)
Assigned to SEOUL VIOSYS CO., LTD., Ansan-si (KR)
Filed by Seoul Viosys Co., Ltd., Ansan-si (KR)
Filed on Aug. 1, 2023, as Appl. No. 18/229,143.
Application 17/163,629 is a division of application No. 16/284,468, filed on Feb. 25, 2019, granted, now 10,985,206, issued on Apr. 20, 2021.
Application 18/229,143 is a continuation of application No. 17/163,629, filed on Feb. 1, 2021, granted, now 11,749,707.
Application 16/284,468 is a continuation of application No. PCT/KR2017/009562, filed on Aug. 31, 2017.
Claims priority of application No. 10-2016-0114057 (KR), filed on Sep. 5, 2016; and application No. 10-2016-0147563 (KR), filed on Nov. 7, 2016.
Prior Publication US 2023/0411436 A1, Dec. 21, 2023
Int. Cl. H10H 29/10 (2025.01); H10H 20/832 (2025.01); H10H 20/857 (2025.01); H10H 20/01 (2025.01); H10H 20/813 (2025.01); H10H 20/831 (2025.01); H10H 29/14 (2025.01)
CPC H10H 29/10 (2025.01) [H10H 20/835 (2025.01); H10H 20/857 (2025.01); H10H 20/0364 (2025.01); H10H 20/813 (2025.01); H10H 20/831 (2025.01); H10H 29/14 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A light apparatus, comprising:
a substrate including a conductive pattern;
a light source disposed on the substrate and electrically connected to the conductive pattern, the light source including:
a first conductivity type semiconductor layer;
a mesa disposed on the first conductivity type semiconductor layer, the mesa comprising an active layer and a second conductivity type semiconductor layer;
an ohmic layer disposed on the mesa and electrically connected to the second conductivity type semiconductor layer;
a lower insulation layer disposed on the ohmic layer and including a first material and a second material;
a preliminary layer disposed between the ohmic layer and the lower insulation layer;
a first pad metal layer disposed on the lower insulation layer and electrically connected to the first conductivity type semiconductor layer;
a second pad metal layer disposed on the lower insulation layer, and electrically connected to the ohmic layer;
an upper insulation layer covering the first pad metal layer and the second pad metal layer, the upper insulation layer comprising a first opening configured to expose the first pad metal layer and a second opening configured to expose the second pad metal layer;
a first bump pad connected to the first pad metal layer through the first opening of the upper insulation layer; and
a second bump pad connected to the second pad metal layer through the second opening of the upper insulation layer; and
a light transmissive layer disposed on the light source,
wherein the lower insulation layer has a plurality of refractive indices, and the upper insulation layer covers a side surface of the preliminary layer and the first material of the lower insulation layer.