US 12,414,420 B2
Light emitting device and light emitting apparatus
Xuan Liang, Beijing (CN); Fei Wang, Beijing (CN); Mingxing Wang, Beijing (CN); Can Wang, Beijing (CN); Xue Dong, Beijing (CN); Qi Qi, Beijing (CN); and Mingkun Yang, Beijing (CN)
Assigned to BOE Technology Group Co., Ltd., Beijing (CN)
Appl. No. 18/016,681
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed Feb. 25, 2022, PCT No. PCT/CN2022/078077
§ 371(c)(1), (2) Date Jan. 18, 2023,
PCT Pub. No. WO2023/159514, PCT Pub. Date Aug. 31, 2023.
Prior Publication US 2024/0243239 A1, Jul. 18, 2024
Int. Cl. H10H 20/857 (2025.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01); H10H 20/855 (2025.01); H10H 29/10 (2025.01)
CPC H10H 20/857 (2025.01) [H10H 20/812 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01); H10H 20/855 (2025.01); H10H 29/10 (2025.01); H10H 20/0364 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A light emitting device, comprising at least two epitaxial structures provided in a first direction and connected in series, wherein two current diffusion layers and a transparent adhesive layer are provided between two adjacent epitaxial structures, a current diffusion layer is provided at one side of each of the two adjacent epitaxial structures, the transparent adhesive layer is provided between the two current diffusion layers, and metal nanoparticles are provided in the transparent adhesive layer, wherein each epitaxial structure comprises an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer which are sequentially stacked along the first direction.