US 12,414,404 B2
A/M/X crystalline material, photovoltaic device, and preparation methods thereof
Shuojian Su, Ningde (CN); Zhaohui Liu, Ningde (CN); Yandong Wang, Ningde (CN); Yanfen Wang, Ningde (CN); Yongsheng Guo, Ningde (CN); Guodong Chen, Ningde (CN); and Chuying Ouyang, Ningde (CN)
Assigned to CONTEMPORARY AMPEREX TECHNOLOGY (HONG KONG) LIMITED, Hong Kong (CN)
Filed by CONTEMPORARY AMPEREX TECHNOLOGY (HONG KONG) LIMITED, Hong Kong (CN)
Filed on May 29, 2023, as Appl. No. 18/325,009.
Application 18/325,009 is a continuation of application No. PCT/CN2021/140788, filed on Dec. 23, 2021.
Prior Publication US 2023/0299219 A1, Sep. 21, 2023
Int. Cl. H10F 77/12 (2025.01); C01G 21/00 (2006.01); H10F 10/174 (2025.01); H10F 71/00 (2025.01); H10F 77/14 (2025.01); H10F 77/164 (2025.01)
CPC H10F 77/12 (2025.01) [C01G 21/006 (2013.01); H10F 10/174 (2025.01); H10F 71/128 (2025.01); H10F 77/148 (2025.01); H10F 77/164 (2025.01); C01P 2002/34 (2013.01); C01P 2006/40 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A photovoltaic device, comprising a photoactive crystalline material layer, wherein the photoactive crystalline material layer comprises a first region;
in the first region, the photoactive crystalline material layer comprises a penetrating crystal grain, wherein the penetrating crystal grain is a crystal grain penetrating through the photoactive crystalline material layer, and a percentage p of a quantity of penetrating crystal grains in a total quantity of crystal grains in the first region of the photoactive crystalline material layer is ≥80%; and
in the first region, the photoactive crystalline material layer comprises a backlight side and a backlight crystal grain, wherein the backlight crystal grain is a crystal grain having at least one face exposed to the backlight side, and the face of the backlight crystal grain exposed to the backlight side is a backlight crystal face, wherein
the backlight side has an average flatness index Ravg, wherein 10≤Ravg≤70; and
Ravg of the backlight side is calculated according to the following formula:

OG Complex Work Unit Math
wherein Ri is flatness index of the i-th backlight crystal grain in the first region, and Ri is calculated according to the following formula:
Ri=di/hi
wherein di is width of a backlight crystal face of the i-th backlight crystal grain in the first region;
hi is protrusion height of the backlight crystal face of the i-th backlight crystal grain in the first region; and
n is quantity of all backlight crystal grains in the first region.