| CPC H10F 39/807 (2025.01) [H10F 39/8053 (2025.01); H10F 39/8063 (2025.01)] | 20 Claims |
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1. An image sensor comprising:
a substrate comprising a first surface and a second surface opposing the first surface;
a first pixel group comprising a first four photodiodes (PDs) arranged in a 2×2 matrix structure in a plan view, a first single color filter on the first four PDs, and a first microlens on the first four PDs;
a second pixel group comprising a second four PDs arranged in the 2×2 matrix structure in the plan view, a second single color filter on second four PDs, and a second microlens on the second four PDs;
a first isolation trench between the first pixel group and the second pixel group and in contact with the second surface; and
a second isolation trench between the first four PDs and in contact with the second surface,
wherein the first isolation trench comprises N number of layers filling the first isolation trench and each of N number of layers is in contact with the second surface,
wherein the second isolation trench comprises M number of layers filling the second isolation trench and each of M number of layers is in contact with the second surface,
wherein N and M are integers equal to or greater than 1,
wherein N is different from M,
wherein the first pixel group is directly adjacent to the second pixel group,
wherein the image sensor is configured to receive light through the second surface, and
wherein the first single color filter and the second single color filter transmit light of different colors.
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