| CPC H10F 39/807 (2025.01) [H10F 39/802 (2025.01); H10F 39/8037 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/811 (2025.01)] | 14 Claims |
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1. An image sensor, comprising:
a semiconductor substrate including a first surface and a second surface disposed opposite to the first surface;
a pixel separation structure disposed in the semiconductor substrate and defining a pixel region, the pixel separation structure surrounding the pixel region in a plan view;
first and second photoelectric conversion regions disposed in the semiconductor substrate on the pixel region;
a first transfer gate electrode disposed on the first surface of the semiconductor substrate and between the first photoelectric conversion region and a first floating diffusion region;
a second transfer gate electrode disposed on the first surface of the semiconductor substrate and between the second photoelectric conversion region and a second floating diffusion region;
a pixel gate electrode disposed on the first surface of the semiconductor substrate and overlapping one of the first and second photoelectric conversion regions;
impurity regions disposed on opposite sides of the pixel gate electrode; and
a microlens disposed on the second surface of the semiconductor substrate and the pixel region,
wherein the microlens vertically overlaps the first and second photoelectric conversion regions,
wherein the first and second photoelectric conversion regions are spaced apart from each other in a first direction,
wherein the first transfer gate electrode is spaced apart from the pixel gate electrode in a second direction that intersects the first direction, and
wherein the first and second directions are parallel to the first surface of the semiconductor substrate.
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