US 12,414,388 B2
Epitaxial silicon wafer, method for producing same, and method for producing semiconductor device
Ryo Hirose, Tokyo (JP); and Takeshi Kadono, Tokyo (JP)
Assigned to SUMCO CORPORATION, Tokyo (JP)
Appl. No. 18/041,930
Filed by SUMCO CORPORATION, Tokyo (JP)
PCT Filed Jul. 8, 2021, PCT No. PCT/JP2021/025864
§ 371(c)(1), (2) Date Feb. 16, 2023,
PCT Pub. No. WO2022/044562, PCT Pub. Date Mar. 3, 2022.
Claims priority of application No. 2020-142329 (JP), filed on Aug. 26, 2020.
Prior Publication US 2023/0317761 A1, Oct. 5, 2023
Int. Cl. H01L 27/146 (2006.01); C30B 25/18 (2006.01); C30B 25/20 (2006.01); C30B 29/06 (2006.01); C30B 31/22 (2006.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01)
CPC H10F 39/028 (2025.01) [C30B 25/186 (2013.01); C30B 25/20 (2013.01); C30B 29/06 (2013.01); C30B 31/22 (2013.01); H10F 39/199 (2025.01)] 8 Claims
OG exemplary drawing
 
1. A method of producing an epitaxial silicon wafer, the method comprising:
a step of irradiating a surface of a silicon wafer with a cluster ion beam including SiHx ions and C2Hy ions to form a modified layer that is located in a surface layer portion of the silicon wafer and that contains a solid solution of constituent elements of the cluster ion beam, where at least one of the integers 1 to 3 is selected as x of the SiHx ions, and at least one of the integers 2 to 5 is selected as y of the C2Hy ions; and
a step of forming a silicon epitaxial layer on the modified layer of the silicon wafer,
wherein a dose of the SiHx ions is 1.5×1014 ions/cm2 or more.