US 12,414,380 B2
Method for forming an integrated chip (IC) including forming a through substrate via (TSV) in an isolation structure formed in a first opening that formed in a metal substrate layer
Harry-Hak-Lay Chuang, Zhubei (TW); Hsin Fu Lin, Hsinchu (TW); and Chien Hung Liu, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 8, 2023, as Appl. No. 18/366,831.
Application 18/366,831 is a division of application No. 17/397,160, filed on Aug. 9, 2021.
Claims priority of provisional application 63/214,846, filed on Jun. 25, 2021.
Prior Publication US 2023/0387131 A1, Nov. 30, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 21/762 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10D 87/00 (2025.01)
CPC H10D 87/00 (2025.01) [H01L 21/76283 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53228 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming an integrated chip (IC), the method comprising:
receiving a workpiece, wherein the workpiece comprises a semiconductor device over a device substrate and comprises an interlayer dielectric (ILD) structure over the semiconductor device and over a first side of the device substrate, wherein the device substrate is a semiconductor material;
forming a device layer by performing a thinning process on a second side of the device substrate that reduces a thickness of the device substrate, wherein the second side of the device substrate is opposite the first side of the device substrate;
after the thinning process, forming an insulating layer on a side of the device layer, wherein the side of the device layer is opposite the ILD structure; and
forming a metal layer on the insulating layer, such that the insulating layer vertically separates the metal layer from the device layer;
forming a dielectric layer on the metal layer, such that the metal layer vertically separates the dielectric layer from the insulating layer;
forming a first opening that extends vertically through the dielectric layer and vertically through the metal layer, wherein the first opening exposes a portion of the insulating layer;
forming a first isolation structure in the first opening by filling the opening with a dielectric material;
forming a second opening that extends vertically through the first isolation structure, the portion of the insulating layer, the device layer, and the ILD structure; and
forming a first through-substrate via (TSV) in the second opening.