US 12,414,352 B2
Two-dimensional vertical fins
Kangguo Cheng, Schenetady, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Oct. 12, 2023, as Appl. No. 18/485,842.
Application 18/485,842 is a continuation of application No. 17/710,364, filed on Mar. 31, 2022, granted, now 11,823,956, issued on Nov. 21, 2023.
Application 17/710,364 is a continuation of application No. 16/809,157, filed on Mar. 4, 2020, granted, now 11,315,836, issued on Apr. 26, 2022.
Prior Publication US 2024/0047274 A1, Feb. 8, 2024
Int. Cl. H10D 84/01 (2025.01); H01L 21/306 (2006.01); H10D 30/01 (2025.01); H10D 30/63 (2025.01); H10D 62/10 (2025.01); H10D 84/03 (2025.01)
CPC H10D 84/016 (2025.01) [H01L 21/30612 (2013.01); H10D 30/025 (2025.01); H10D 30/63 (2025.01); H10D 62/126 (2025.01); H10D 84/038 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A two-dimensional vertical fin field effect transistor device, comprising:
a two-dimensional vertical fin;
an extension region having a same shape as the two-dimensional vertical fin between the two-dimensional vertical fin and a substrate; and
a top source/drain on the two-dimensional vertical fin, wherein a top surface of the top source/drain region on the two-dimensional vertical fin has a cross shape.