US 12,414,349 B2
Semiconductor die including an edge termination structure laterally between an active area and a lateral edge region of the die
Adrian Finney, Villach (AT); Oliver Blank, Villach (AT); Alessandro Ferrara, Villach (AT); and Stefan Tegen, Dresden (DE)
Assigned to Infineon Technologies Austria AG, Villach (AT)
Filed by Infineon Technologies Austria AG, Villach (AT)
Filed on Sep. 16, 2022, as Appl. No. 17/946,539.
Claims priority of application No. 21198026 (EP), filed on Sep. 21, 2021.
Prior Publication US 2023/0088305 A1, Mar. 23, 2023
Int. Cl. H10D 64/00 (2025.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01)
CPC H10D 64/117 (2025.01) [H10D 30/665 (2025.01); H10D 30/668 (2025.01); H10D 62/102 (2025.01); H10D 64/115 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor die, comprising:
a device in an active area of the die, the device comprising a field electrode region formed in a field electrode trench extending vertically into a semiconductor body, wherein the field electrode region comprises a first and a second field electrode stacked vertically above each other in the field electrode trench; and
an edge termination structure laterally between the active area and a lateral edge region of the die, the edge termination structure comprising a first and a second shield electrode arranged laterally consecutive between the active area and the lateral edge region to stepwise decrease an electrical potential between the edge region and the active area,
wherein in a first lateral direction, the first and second shield electrodes are arranged in a common trench,
wherein the common trench is the field electrode trench in the active area.