| CPC H10D 62/121 (2025.01) [H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01)] | 20 Claims |
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1. A semiconductor structure, comprising:
a first nanosheet channel structure;
a first high-k dielectric layer surrounding the first nanosheet channel structure;
a second nanosheet channel structure disposed above and substantially parallel to the first nanosheet channel structure;
a second high-k dielectric layer surrounding the second nanosheet channel structure;
a work function adjustment layer comprising silicon and disposed between the first high-k dielectric layer and the second high-k dielectric layer, wherein the work function adjustment layer comprises an elementary silicon portion in direct contact with the first and second high-k dielectric layers, and a silicon oxide coating in direct contact with the elementary silicon portion, wherein silicon elements of the silicon oxide coating are provided by the elementary silicon portion;
a metal layer in direct contact with the silicon oxide coating; and
a void disposed in the work function adjustment layer and between the first nanosheet channel structure and the second nanosheet channel structure,
wherein the first high-k dielectric layer and the second high-k dielectric layer are separated by the work function adjustment layer, and the work function adjustment layer is substantially free of metal.
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