US 12,414,324 B2
Semiconductor device and fabrication method thereof
Chin-Fu Chen, Hsinchu County (TW)
Assigned to Ark HDPS Semiconductor Pte. LIMITED., Singapore (SG)
Filed by Ark Semiconductor Corp. Ltd., Shenzhen (CN)
Filed on Mar. 17, 2023, as Appl. No. 18/122,726.
Claims priority of application No. 202210361348.8 (CN), filed on Apr. 7, 2022.
Prior Publication US 2023/0327016 A1, Oct. 12, 2023
Int. Cl. H10D 30/66 (2025.01); H10D 30/01 (2025.01); H10D 64/00 (2025.01); H10D 64/27 (2025.01)
CPC H10D 30/668 (2025.01) [H10D 30/0297 (2025.01); H10D 64/117 (2025.01); H10D 64/513 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
an epitaxial layer, disposed on the substrate;
a first body region, disposed in the epitaxial layer;
a first trench gate structure, disposed in the epitaxial layer, extended along a first direction, and adjacent to the first body region;
a first planar gate, disposed on the epitaxial layer, extended along a second direction, and at least a portion of the first planar gate located directly above the first body region, wherein the second direction and the first direction have a non-zero included angle therebetween;
a first source electrode, disposed on the epitaxial layer and extended downward into the first body region;
a first source region, disposed in the first body region, and at least a portion of the first source region adjacent to the first source electrode; and
a drain electrode, disposed under the substrate.