US 12,414,317 B2
Resonant tunneling diodes and manufacturing methods thereof
Kai Cheng, Jiangsu (CN); and Kai Liu, Jiangsu (CN)
Assigned to ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
Appl. No. 17/783,292
Filed by ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
PCT Filed Mar. 5, 2021, PCT No. PCT/CN2021/079266
§ 371(c)(1), (2) Date Jun. 8, 2022,
PCT Pub. No. WO2022/183475, PCT Pub. Date Sep. 9, 2022.
Prior Publication US 2023/0343877 A1, Oct. 26, 2023
Int. Cl. H10D 8/75 (2025.01); H10D 8/01 (2025.01); H10D 62/85 (2025.01); H10H 20/816 (2025.01)
CPC H10D 8/755 (2025.01) [H10D 8/053 (2025.01); H10D 62/8503 (2025.01); H10H 20/8162 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A resonant tunneling diode, comprising:
a first barrier layer;
a second barrier layer;
a potential well layer between the first barrier layer and the second barrier layer;
a collector electrode;
an emitter electrode, the collector electrode close to the first barrier layer, the emitter electrode close to the second barrier layer;
a third isolation layer entirely between the collector electrode and the first barrier layer;
wherein a material of the first barrier layer, a material of the second barrier layer, and a material of the potential well layer all comprise a group III nitride, a material of the third isolation layer comprises AlN, and the material of the potential well layer comprises a gallium element; and
a first isolation layer between the first barrier layer and the potential well layer.