US 12,414,302 B2
Ferroelectric device
Mihaela Ioana Popovici, Haasrode (BE); Jan Van Houdt, Bekkevoort (BE); Amey Mahadev Walke, Heverlee (BE); Gouri Sankar Kar, Leuven (BE); and Jasper Bizindavyi, Leuven (BE)
Assigned to IMEC VZW, Leuven (BE)
Filed by IMEC VZW, Leuven (BE)
Filed on Dec. 13, 2022, as Appl. No. 18/065,335.
Claims priority of application No. 21216277 (EP), filed on Dec. 21, 2021.
Prior Publication US 2023/0200078 A1, Jun. 22, 2023
Int. Cl. H01L 27/12 (2006.01); C23C 16/455 (2006.01); H10B 51/00 (2023.01); H10D 1/68 (2025.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01)
CPC H10B 51/00 (2023.02) [C23C 16/45536 (2013.01); H10D 1/692 (2025.01); H10D 30/6755 (2025.01); H10D 86/421 (2025.01); H10D 86/60 (2025.01)] 20 Claims
OG exemplary drawing
 
7. A method for fabricating a ferroelectric device, wherein the method comprises:
forming a ferroelectric device layer structure comprising:
a first electrode;
a second electrode;
a ferroelectric layer of hafnium zirconate (HZO); and
an oxide layer of Nb2O5 or Ta2O5 arranged on the ferroelectric layer,
wherein the ferroelectric layer and the oxide layer are arranged between the first electrode and the second electrode; and
annealing the layers of the ferroelectric device layer structure at a temperature in a range of 350° C.-750° C. if the oxide layer is made of Nb2O5 and in a range of 350° C.-900° C. if the oxide layer is made of Ta2O5.