| CPC H10B 12/00 (2023.02) [H10D 30/6734 (2025.01); H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01); H10D 87/00 (2025.01); H10D 99/00 (2025.01)] | 11 Claims |
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1. A method for manufacturing a semiconductor device, comprising steps of:
depositing a first insulator;
depositing an oxide film over the first insulator;
performing first heat treatment;
depositing a first conductive film and a first insulating film in this order over the oxide film;
processing the oxide film, the first conductive film, and the first insulating film into island shapes to form an oxide, a conductive layer, and an insulating layer;
depositing a second insulator over the first insulator, the oxide, the conductive layer, and the insulating layer;
depositing a third insulator over the second insulator;
forming an opening in the conductive layer, the insulating layer, the second insulator, and the third insulator to form a first conductor and a second conductor from the conductive layer and a fourth insulator and a fifth insulator from the insulating layer;
performing second heat treatment;
depositing a second insulating film over the third insulator and the opening;
depositing a third insulating film over the second insulating film;
performing microwave treatment;
depositing a second conductive film over the third insulating film; and
performing CMP treatment on the second insulating film, the third insulating film, and the second conductive film to expose a top surface of the third insulator so that a sixth insulator, a seventh insulator, and a third conductor are formed,
wherein the second insulating film is deposited by a PEALD method using a first gas containing silicon but not containing hydrocarbon and a second gas which is an oxidizing gas.
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