| CPC H03K 17/0822 (2013.01) [H03K 17/063 (2013.01); H03K 17/082 (2013.01); H03K 2217/0027 (2013.01)] | 17 Claims |
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1. A circuit comprising:
a main switch circuit, configured to connect a power source to a load, the main switch circuit comprising a plurality of metal oxide semiconductor field effect transistors (MOSFET), wherein the plurality of MOSFETs are arranged in parallel;
a protection switch circuit connected in parallel to the main switch circuit and, wherein the protection switch circuit, when conducting, is configured to carry at least some electrical current to the load; and
control circuitry connected to a control terminal of the protection switch circuit, wherein the control circuitry is configured to:
detect a fault on load side of the main switch circuit; and
in response to detecting the fault, cause the protection switch circuit to carry a first magnitude of electrical current for a first duration and carry a second magnitude of electrical current for a second duration subsequent to the first duration,
wherein a drain-source voltage of the main switch circuit for the first duration and the second duration is based on a break-down voltage for the plurality of MOSFETs of the main switch circuit, and
wherein the control circuitry is configured to output a control voltage to the control terminal for the protection switch circuit such that the first magnitude of electrical current carried by the protection switch circuit is configured to prevent latch-up damage for the main switch circuit.
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