US 12,413,202 B2
Surface acoustic wave resonator arrangement
Carsten Potratz, Munich (DE); Peter Selmeier, Maitenbeth (DE); Thomas Bauer, Munich (DE); and Helmut Klamm, Munich (DE)
Assigned to RF360 Singapore Pte. Ltd., Republic Plaza (SG)
Appl. No. 17/441,187
Filed by RF360 SINGAPORE PTE. LTD., Republic Plaza (SG)
PCT Filed Mar. 30, 2020, PCT No. PCT/EP2020/058991
§ 371(c)(1), (2) Date Sep. 20, 2021,
PCT Pub. No. WO2020/201226, PCT Pub. Date Oct. 8, 2020.
Claims priority of application No. 10 2019 109 022.9 (DE), filed on Apr. 5, 2019.
Prior Publication US 2022/0158611 A1, May 19, 2022
Int. Cl. H03H 9/02 (2006.01); H03H 9/145 (2006.01); H03H 9/25 (2006.01); H03H 9/64 (2006.01); H04B 1/40 (2015.01)
CPC H03H 9/02834 (2013.01) [H03H 9/145 (2013.01); H03H 9/25 (2013.01); H03H 9/64 (2013.01); H04B 1/40 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A surface acoustic wave resonator arrangement, comprising:
a piezoelectric substrate;
a first surface acoustic wave resonator including an interdigital transducer disposed on the piezoelectric substrate;
a second acoustic wave resonator laterally adjacent to the first surface acoustic wave resonator; and
a single trench disposed within the piezoelectric substrate between the first surface acoustic wave resonator and the second acoustic wave resonator, the single trench facing the first surface acoustic wave resonator and slanted with respect to an edge of the first surface acoustic wave resonator,
wherein the single trench comprises one or more trench portions, each trench portion extending along a direction that forms angles (α1, α2) with the edge of the first surface acoustic wave resonator.