| CPC H03H 9/02259 (2013.01) [H03H 3/02 (2013.01); H03H 9/02015 (2013.01); H03H 9/0207 (2013.01); H03H 9/02102 (2013.01); H03H 9/0211 (2013.01); H03H 9/02157 (2013.01); H03H 9/13 (2013.01); H03H 9/131 (2013.01); H03H 9/17 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/205 (2013.01); H03H 9/54 (2013.01); H03H 9/568 (2013.01); H03H 2003/021 (2013.01); H03H 2009/02165 (2013.01)] | 34 Claims |

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1. A bulk acoustic millimeter wave resonator comprising:
a substrate;
a piezoelectric stack including at least a first piezoelectric layer, a second piezoelectric layer, and a third piezoelectric layer acoustically coupled with one another, in which the first piezoelectric layer and the second piezoelectric layer and the third piezoelectric layer have respective thicknesses to facilitate a main resonant frequency of the bulk acoustic millimeter wave resonator;
an electrode electrically and acoustically coupled with the third piezoelectric layer; and
a patterned layer associated with the electrode, in which the patterned layer is acoustically coupled with the third piezoelectric to facilitate a suppression of a spurious mode of the bulk acoustic millimeter wave resonator.
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