US 12,413,049 B2
Optoelectronic semiconductor device
Frederic Gardes, Southampton (GB); Alwyn John Seeds, London (GB); Huiyun Liu, London (GB); and Siming Chen, London (GB)
Assigned to UNIVERSITY OF SOUTHAMPTON, (GB); and UNIVERSITY COLLEGE LONDON, (GB)
Appl. No. 17/629,897
Filed by UNIVERSITY OF SOUTHAMPTON, Hampshire (GB); and UNIVERSITY COLLEGE LONDON, London (GB)
PCT Filed Jul. 27, 2020, PCT No. PCT/EP2020/071128
§ 371(c)(1), (2) Date Jan. 25, 2022,
PCT Pub. No. WO2021/018832, PCT Pub. Date Feb. 4, 2021.
Claims priority of application No. 1910749 (GB), filed on Jul. 26, 2019.
Prior Publication US 2022/0255297 A1, Aug. 11, 2022
Int. Cl. H01S 5/343 (2006.01); G02B 6/12 (2006.01); G02B 6/13 (2006.01); H01S 5/02 (2006.01); H01S 5/026 (2006.01); H01S 5/34 (2006.01)
CPC H01S 5/343 (2013.01) [G02B 6/12004 (2013.01); G02B 6/131 (2013.01); H01S 5/021 (2013.01); H01S 5/026 (2013.01); H01S 5/341 (2013.01); G02B 2006/12061 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device for use in an optoelectronic integrated circuit;
the device comprising:
a group IV substrate, wherein the substrate is a silicon substrate, a SOI substrate, or a SOI top layer;
a waveguide;
a group III/V multilayer stack; and
a nucleation layer located between the group III/V multilayer stack and the substrate, wherein the nucleation layer has a zincblende structure;
wherein the group III/V multilayer stack comprises a quantum component for producing light for the waveguide;
wherein the waveguide comprises a material with a deposition temperature below 550 degrees Celsius and a refractive index of any value between 1.3 and 3.8.