US 12,413,048 B2
Dilute nitride long-wavelength emitter with improved performance over temperature
Matthew Glenn Peters, Menlo Park, CA (US); Jun Yang, Cupertino, CA (US); Ajit Vijay Barve, San Jose, CA (US); and Guowei Zhao, Milpitas, CA (US)
Assigned to Lumentum Operations LLC, San Jose, CA (US)
Filed by Lumentum Operations LLC, San Jose, CA (US)
Filed on Jun. 21, 2022, as Appl. No. 17/808,030.
Claims priority of provisional application 63/268,099, filed on Feb. 16, 2022.
Prior Publication US 2023/0261443 A1, Aug. 17, 2023
Int. Cl. H01S 5/00 (2006.01); H01S 5/183 (2006.01); H01S 5/30 (2006.01); H01S 5/323 (2006.01); H01S 5/34 (2006.01); H01S 5/042 (2006.01)
CPC H01S 5/3409 (2013.01) [H01S 5/18311 (2013.01); H01S 5/18358 (2013.01); H01S 5/309 (2013.01); H01S 5/32366 (2013.01); H01S 5/3407 (2013.01); H01S 5/04252 (2019.08); H01S 5/18305 (2013.01); H01S 2304/02 (2013.01); H01S 2304/04 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a quantum well (QW) layer using an epitaxial growth process, the epitaxial growth process being performed according to a first growth mode to form the QW layer, the QW layer comprising a first dilute nitride material; and
forming a quantum well barrier (QWB) layer using the epitaxial growth process, the epitaxial growth process being performed according to a second growth mode to form the QWB layer, the QWB layer comprising a second dilute nitride material, wherein at least one of:
a nitrogen flux used in the first growth mode is different from a nitrogen flux used in the second growth mode, or
a gallium flux used in the first growth mode is different from a gallium flux used in the second growth mode.