US 12,412,878 B2
Display device using micro LED and method for manufacturing same
Sunghyun Hwang, Seoul (KR); and Junghoon Kim, Seoul (KR)
Assigned to LG ELECTRONICS INC., Seoul (KR)
Appl. No. 17/638,281
Filed by LG ELECTRONICS INC., Seoul (KR)
PCT Filed Aug. 27, 2019, PCT No. PCT/KR2019/010886
§ 371(c)(1), (2) Date Feb. 25, 2022,
PCT Pub. No. WO2021/040066, PCT Pub. Date Mar. 4, 2021.
Claims priority of application No. 10-2019-0104629 (KR), filed on Aug. 26, 2019.
Prior Publication US 2022/0320057 A1, Oct. 6, 2022
Int. Cl. H01L 25/16 (2023.01); H10H 20/01 (2025.01); H10H 20/819 (2025.01); H10H 20/831 (2025.01); H01L 23/00 (2006.01)
CPC H01L 25/167 (2013.01) [H01L 25/165 (2013.01); H10H 20/013 (2025.01); H10H 20/018 (2025.01); H10H 20/819 (2025.01); H10H 20/8314 (2025.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/9211 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A display device, comprising:
a substrate;
assembly electrodes located on the substrate;
an insulating layer located on the assembly electrodes;
a partition wall located on the insulating layer and shaped to define an assembly recess; and
a semiconductor light emitting element assembled with the assembly recess of the partition wall;
wherein the semiconductor light emitting element comprises:
a first conductivity-type semiconductor layer having a first side inclination angle;
a second conductivity-type semiconductor layer having a second side inclination angle and being located on the first conductivity-type semiconductor layer; and
an active layer having a third side inclination angle and disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer.