US 12,412,858 B2
Semiconductor device structure with conductive bumps
Hui-Min Huang, Taoyuan (TW); Ming-Da Cheng, Taoyuan (TW); Wei-Hung Lin, Xinfeng Township, Hsinchu County (TW); Chang-Jung Hsueh, Taipei (TW); Kai-Jun Zhan, Taoyuan (TW); and Yung-Sheng Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 15, 2024, as Appl. No. 18/635,274.
Application 18/635,274 is a continuation of application No. 17/459,174, filed on Aug. 27, 2021, granted, now 11,990,440.
Prior Publication US 2024/0258259 A1, Aug. 1, 2024
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/14 (2013.01) [H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 2224/0221 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/13018 (2013.01); H01L 2224/14051 (2013.01); H01L 2224/16227 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a semiconductor substrate;
a first conductive structure over the semiconductor substrate, wherein the first conductive structure has a first protruding portion extending towards the semiconductor substrate from a lower surface of the first conductive structure; and
a second conductive structure over the semiconductor substrate, wherein the second conductive structure is substantially as wide as the first conductive structure, the second conductive structure has a second protruding portion extending towards the semiconductor substrate from a lower surface of the second conductive structure, the first conductive structure is closer to a center point of the semiconductor substrate than the second conductive structure, the second protruding portion is wider than the first protruding portion, and bottoms of the first protruding portion and the second protruding portion are substantially level with each other.