US 12,412,848 B2
Physical unclonable function generator and manufacturing method thereof
Po Hsien Chen, Tainan (TW); Ping-Chia Shih, Tainan (TW); Che Hao Kuo, Tainan (TW); Chia-Min Hung, Tainan (TW); Ching-Hua Yeh, Tainan (TW); and Wan-Chun Liao, Hsinchu County (TW)
Assigned to United Microelectronics Corp., Hsinchu (TW)
Filed by United Microelectronics Corp., Hsinchu (TW)
Filed on Jul. 27, 2022, as Appl. No. 17/874,299.
Prior Publication US 2024/0006345 A1, Jan. 4, 2024
Int. Cl. H01L 23/00 (2006.01); H04L 9/32 (2006.01); H10D 62/10 (2025.01)
CPC H01L 23/57 (2013.01) [H04L 9/3278 (2013.01); H10D 62/115 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A physical unclonable function (PUF) generator, comprising:
a substrate; and
semiconductor units, wherein each of the semiconductor units comprises:
an isolation structure located in the substrate and having a first protrusion portion and a recess, wherein the first protrusion portion and the recess are adjacent to each other;
a first conductive line located above the first protrusion portion and the recess; and
a second conductive line located above the first conductive line, wherein
at least one short circuit randomly exists between at least one of the first conductive lines and at least one of the second conductive lines in at least one of the semiconductor units, and
an entire bottom surface of the second conductive line is a flat surface.