US 12,412,842 B2
Microelectronic structures including bridges
Omkar G. Karhade, Chandler, AZ (US); Nitin A. Deshpande, Chandler, AZ (US); Mohit Bhatia, Chandler, AZ (US); and Debendra Mallik, Chandler, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Sep. 7, 2023, as Appl. No. 18/462,600.
Application 18/462,600 is a continuation of application No. 16/902,910, filed on Jun. 16, 2020, granted, now 11,804,441.
Prior Publication US 2023/0420376 A1, Dec. 28, 2023
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01)
CPC H01L 23/5385 (2013.01) [H01L 21/481 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 23/49833 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/73 (2013.01); H01L 25/0652 (2013.01); H01L 25/0655 (2013.01); H01L 25/18 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/1703 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/73253 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A microelectronic structure, comprising:
a substrate including a first metal layer and a second metal layer;
a cavity in the substrate, wherein a portion of the first metal layer in the substrate, and a portion of the second metal layer in the substrate, are exposed in the cavity, and wherein the portion of the first metal layer at least partially overlaps the portion of the second metal layer; and
a bridge component in the cavity, wherein the bridge component includes a first face and an opposing second face, wherein the second face of the bridge component is between the first face of the bridge component and a bottom surface of the cavity in the substrate, wherein the portion of the first metal layer is between the second face of the bridge component and the portion of the second metal layer, wherein the bridge component includes a first conductive contact at the first face and a second conductive contact at the second face, and wherein the second conductive contact is directly coupled to the portion of the second metal layer in the cavity by solder.