US 12,412,840 B2
Power module with multi-layer substrate and second insulation layer to increase power density
Kwnag-Soo Kim, Sunnyvale, CA (US); Vivek Kishorechand Arora, San Jose, CA (US); and Woochan Kim, San Jose, CA (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Jun. 1, 2022, as Appl. No. 17/830,291.
Prior Publication US 2023/0395514 A1, Dec. 7, 2023
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 23/373 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 25/16 (2023.01); H01L 25/18 (2023.01)
CPC H01L 23/5383 (2013.01) [H01L 21/481 (2013.01); H01L 21/4857 (2013.01); H01L 23/3735 (2013.01); H01L 23/3121 (2013.01); H01L 23/49894 (2013.01); H01L 24/48 (2013.01); H01L 25/16 (2013.01); H01L 25/18 (2013.01); H01L 2224/48225 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a multi-layer substrate having a bottom metal layer, a top metal layer, and a first insulation layer between the bottom metal layer and the top metal layer, wherein a plurality of first conductive traces are formed in the top metal layer, and wherein at least a portion of the first insulation layer is exposed between the plurality of first conductive traces;
a second insulation layer disposed over the exposed portion of the first insulation layer and over one or more first segments of the plurality of first conductive traces, wherein one or more second segments of the plurality of first conductive traces are partially covered by the second insulation layer;
a plurality of second conductive traces formed on top of the second insulation layer;
one or more semiconductor dies mounted on the one or more second segments of the plurality of first conductive traces; and
mold compound covering the one or more semiconductor dies, the second insulation layer, the plurality of first conductive traces, and the plurality of second conductive traces, wherein the mold compound is in direct contact with the one or more semiconductor dies.