US 12,412,839 B2
Semiconductor device having an interconnection including plural metal layers, and manufacturing method thereof
Akira Nakajima, Yokkaichi Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Feb. 1, 2022, as Appl. No. 17/590,057.
Claims priority of application No. 2021-137364 (JP), filed on Aug. 25, 2021.
Prior Publication US 2023/0069025 A1, Mar. 2, 2023
Int. Cl. H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC H01L 23/535 (2013.01) [H01L 21/76805 (2013.01); H01L 21/76846 (2013.01); H01L 21/76895 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first conductive layer;
an interconnection provided above the first conductive layer along a thickness direction of the semiconductor device; and
a contact provided between the first conductive layer and the interconnection along the thickness direction,
wherein:
the interconnection includes:
a first metal layer containing hexagonal titanium (Ti), the first metal layer being provided above the first conductive layer along the thickness direction;
a second metal layer containing tantalum (Ta), the second metal layer having a body-centered cubic lattice-like structure and being provided on and in direct contact with the first metal layer; and
a first wiring material provided on and in direct contact with the second metal layer,
the second metal layer is provided between the first metal layer and the first wiring material along the thickness direction,
the first metal layer contains titanium having a crystal plane with a plane orientation (002), and
the second metal layer contains tantalum having a crystal plane with a plane orientation (110).