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1. An integrated circuit (IC) structure, comprising: a first dielectric material; a second dielectric material on the first dielectric material; a recess in the second dielectric material, wherein the recess includes a bottom, a top, a first sidewall, and a second sidewall, the bottom extending across a width of a recess from the first sidewall to the second sidewall, wherein a top surface of the first dielectric material defines the bottom of the recess, the second dielectric material extends along the heights of the first sidewall and the second sidewall, and the bottom of the recess is aligned with a bottom surface of the second dielectric material; a first material within the recess and at the bottom of the recess, wherein the first material includes a metal and oxygen, a self-assembled monolayer (SAM) material, or an organic material, and wherein the first material is directly on the first dielectric material; a second material within the recess and between the first material and the top of the recess, wherein a base of the second material is in direct contact with the first material; and a third material within the recess, the third material different from the first material and different from the second material, wherein the third material is within; a first region along the first sidewall of the recess and in contact with an upper surface of the first material within the recess; and a second region along the second sidewall of the recess and in contact with the upper surface of the first material within the recess, wherein the second material is in contact with the first region and the second region, wherein the third material along the first and second sidewalls of the recess is in direct contact with the second material, the first and second sidewalls of the recess, and the upper surface of the first material within the recess.
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