US 12,412,830 B2
Semiconductor device with power via
Ruilong Xie, Niskayuna, NY (US); Junli Wang, Sr., Slingerlands, NY (US); Kisik Choi, Watervliet, NY (US); Julien Frougier, Albany, NY (US); Reinaldo Vega, Mahopac, NY (US); Lawrence A. Clevenger, Saratoga Springs, NY (US); Albert M. Chu, Nashua, NH (US); and Brent A. Anderson, Jericho, VT (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Jun. 22, 2022, as Appl. No. 17/808,186.
Prior Publication US 2023/0420359 A1, Dec. 28, 2023
Int. Cl. H01L 23/522 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H10D 30/60 (2025.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 62/00 (2025.01); H10D 62/13 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 86/00 (2025.01); H10D 86/01 (2025.01); H01L 23/528 (2006.01); H10D 84/85 (2025.01)
CPC H01L 23/5226 (2013.01) [H01L 21/762 (2013.01); H01L 21/76804 (2013.01); H01L 21/76883 (2013.01); H10D 30/60 (2025.01); H10D 30/62 (2025.01); H10D 30/797 (2025.01); H10D 62/021 (2025.01); H10D 62/151 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/038 (2025.01); H10D 86/00 (2025.01); H10D 86/01 (2025.01); H10D 86/011 (2025.01); H01L 21/76831 (2013.01); H01L 23/5286 (2013.01); H01L 2924/13091 (2013.01); H10D 84/85 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a field effect transistor (FET) including first and second source/drain (S/D) epitaxial regions;
a gate cut region at cell boundaries between the first and second S/D epitaxial regions;
a dielectric liner and a dielectric core formed in the gate cut region;
a backside power rail (BPR) and a backside power distribution network (BSPDN);
a power via passing through the dielectric core and connecting to the BPR and the BSPDN;
first metal contacts formed in contact with the first and second S/D epitaxial regions; and
a via to backside power rail (VBPR) contact,
wherein the dielectric liner separates the power via from the first S/D epitaxial region, and a portion of the dielectric liner is removed on only one side of the power via and the VBPR contact is formed in a location where this portion of the dielectric liner is removed.