| CPC H01L 23/3185 (2013.01) [H01L 21/02074 (2013.01); H01L 23/3192 (2013.01); H01L 24/02 (2013.01)] | 20 Claims |

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1. A device comprising:
a processor die comprising circuit blocks, the circuit blocks comprising active devices of a first technology node;
a power gating die comprising power semiconductor devices of a second technology node, a pitch between adjacent ones of the power semiconductor devices of the second technology node being larger than a pitch between adjacent ones of the active devices of the first technology node; and
a first redistribution structure comprising first metallization patterns, the first metallization patterns comprising power supply source lines and power supply ground lines, wherein a first subset of the circuit blocks is electrically coupled to the power supply source lines and the power supply ground lines through the power semiconductor devices, and a second subset of the circuit blocks is permanently electrically coupled to the power supply source lines and the power supply ground lines.
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