US 12,412,761 B2
Method of controlling the patterned wafer process temperature using the contact type thermometer in the front side of a dummy substrate to accurately measure emissivity in order to perform temperature measurement using radiation thermometer
Shuhei Onishi, Kyoto (JP); and Takahiro Kitazawa, Kyoto (JP)
Assigned to SCREEN Holdings Co., Ltd., Kyoto (JP)
Filed by SCREEN Holdings Co., Ltd., Kyoto (JP)
Filed on Jan. 18, 2022, as Appl. No. 17/577,432.
Claims priority of application No. 2021-030353 (JP), filed on Feb. 26, 2021.
Prior Publication US 2022/0277972 A1, Sep. 1, 2022
Int. Cl. H01L 21/67 (2006.01); G01K 7/02 (2021.01)
CPC H01L 21/67248 (2013.01) [G01K 7/028 (2013.01); H01L 21/67115 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A temperature measurement method of measuring a temperature of a substrate, comprising steps of:
(a) measuring a temperature of a back surface of a first substrate with a back surface side radiation thermometer while heating the first substrate having a front surface to which a contact-type thermometer is attached, and correcting emissivity set to the back surface side radiation thermometer based on a temperature of the first substrate measured with the contact-type thermometer;
(b) measuring a temperature of a back surface and a temperature of a front surface of a second substrate having a pattern formed on the front surface with the back surface side radiation thermometer and a front surface side radiation thermometer, respectively, while heating the second substrate, and correcting emissivity set to the front surface side radiation thermometer based on a temperature of the second substrate measured with the back surface side radiation thermometer; and
(c) measuring a temperature of the front surface of the second substrate heated by irradiation with light with the front surface side radiation thermometer.