US 12,412,747 B2
Post-processing of indium-containing compound semiconductors
Weikang Fan, Newport (GB); and Adam S. Beachey, Newport (GB)
Assigned to SPTS Technologies Limited, Newport (GB)
Filed by SPTS Technologies Limited, Newport (GB)
Filed on Mar. 20, 2023, as Appl. No. 18/123,954.
Claims priority of application No. 2209654 (GB), filed on Jun. 30, 2022.
Prior Publication US 2024/0006159 A1, Jan. 4, 2024
Int. Cl. H01L 21/306 (2006.01); H01L 21/3065 (2006.01); G02B 6/12 (2006.01); G02B 6/136 (2006.01); H01J 37/32 (2006.01)
CPC H01L 21/30621 (2013.01) [H01L 21/3065 (2013.01); G02B 2006/12078 (2013.01); G02B 6/136 (2013.01); H01J 37/32082 (2013.01); H01J 37/3244 (2013.01); H01J 2237/334 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of plasma etching an indium-containing compound semiconductor substrate, the method comprising the steps of:
providing a substrate on a substrate support within a chamber, wherein the substrate comprises an indium-containing compound semiconductor material;
performing a primary plasma etching process by generating a plasma from a first etchant gas mixture within the chamber to plasma etch the indium-containing compound semiconductor material to form an etched substrate,
wherein the first etchant gas mixture comprises a halogen-containing component and a nitrogen-containing component; and
performing a secondary plasma etching process by generating a plasma from a second etchant gas or gas mixture comprising an oxygen-containing component,
wherein an RF bias power is applied to the etched substrate during the secondary etching process and the RF bias power is between about 10 W and about 50 W.