US 12,412,743 B2
Method of fabricating a hollow wall for controlling directional deposition of material
Pavel Aseev, Delft (NL); Ekaterina Chernysheva, Delft (NL); Amrita Singh, Delft (NL); and Guanzhong Wang, Delft (NL)
Assigned to Microsoft Technology Licensing, LLC, Redmond, WA (US); and Delft University of Technology, Delft (NL)
Appl. No. 17/756,812
Filed by Microsoft Technology Licensing, LLC, Redmond, WA (US)
PCT Filed Dec. 5, 2019, PCT No. PCT/US2019/064705
§ 371(c)(1), (2) Date Jun. 2, 2022,
PCT Pub. No. WO2021/112856, PCT Pub. Date Jun. 10, 2021.
Prior Publication US 2023/0008296 A1, Jan. 12, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H10N 60/01 (2023.01); H10N 60/85 (2023.01)
CPC H01L 21/02639 (2013.01) [H01L 21/02546 (2013.01); H01L 21/02549 (2013.01); H01L 21/02592 (2013.01); H01L 21/02603 (2013.01); H01L 21/31053 (2013.01); H10N 60/01 (2023.02); H10N 60/85 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A method of fabricating a hollow wall, which method comprises:
forming a layer of a resist on a substrate;
removing a portion of the resist selectively to form a channel in the resist;
forming a layer of an amorphous dielectric material in the channel in the resist, wherein the amorphous dielectric material is silicon oxide or silicon nitride; and
removing the resist and portions of the amorphous dielectric material situated on the resist to form the hollow wall, wherein the hollow wall has a generally rectangular shape comprising a front surface, a rear surface opposite the front surface, and a pair of side surfaces and wherein the generally rectangular shape includes a chamfered corner between the front surface and one of the pair of side surfaces, the chamfered corner having an internal angle to the respective side surface.