US 12,412,732 B2
Plasma processing apparatus
Kazushi Kaneko, Yamanashi (JP); Satoru Kawakami, Yamanashi (JP); and Eiki Kamata, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Nov. 20, 2023, as Appl. No. 18/515,129.
Claims priority of application No. 2022-192542 (JP), filed on Dec. 1, 2022.
Prior Publication US 2024/0186115 A1, Jun. 6, 2024
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32247 (2013.01) [H01J 37/32238 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A plasma processing apparatus, comprising:
a processing chamber accommodating a substrate, and defining a processing space by an upper wall, a side wall, and a lower wall;
a microwave generator configured to generate a microwave for generating plasma;
a plurality of microwave radiators provided above the upper wall, and configured to radiate the microwave toward the processing chamber;
a plurality of microwave transmission windows provided at positions corresponding to the plurality of microwave radiators in the upper wall, and formed of a dielectric; and
a plurality of resonator array structures disposed on lower surfaces of the plurality of microwave transmission windows, respectively, and formed by arranging a plurality of resonators that are capable of resonance with a magnetic field component of the microwave and are smaller in size than a wavelength of the microwave.