| CPC G06F 12/0842 (2013.01) [G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/24 (2013.01); G11C 16/30 (2013.01); G11C 16/3459 (2013.01); G06F 2212/1024 (2013.01)] | 20 Claims |

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18. A memory device comprising:
a page buffer comprising a cache register and at least one data register;
a memory array, configured as single-level cell (SLC) memory, comprising a set of sub-blocks coupled with the page buffer; and
control logic operatively coupled with the page buffer, the control logic to perform operations comprising:
receive, from a host system, a program page cache command comprising a first page of SLC data and a first page address, wherein the host system has stored the first page of SLC data in the cache register;
moving the first page of SLC data from the cache register to the at least one data register;
causing a subsequent page of the SLC data received from the host system with a second page address to be stored in the cache register; and
concurrently causing:
the first page of SLC data to be programmed from the at least one data register to the first page address at a first sub-block of the set of sub-blocks; and
the subsequent page of the SLC data to be programmed from the cache register to the second page address of a second sub-block of the set of sub-blocks;
wherein at least some of the operations for programming the first page and the subsequent page of the SLC data to the set of sub-blocks are to be performed in parallel.
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