US 12,411,612 B2
Method of increasing flash endurance by improved metadata management
Srikanth Tumkur Shivanand, Karnataka (IN); Paul Justin Koilraj Jayakumar, Karnataka (IN); and Sharath Kumar Kodase, Karnataka (IN)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 13, 2024, as Appl. No. 18/603,941.
Application 18/603,941 is a division of application No. 16/432,287, filed on Jun. 5, 2019, granted, now 11,960,729.
Claims priority of application No. 201841022190 (IN), filed on Jun. 13, 2018.
Prior Publication US 2024/0256144 A1, Aug. 1, 2024
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0616 (2013.01) [G06F 3/0647 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method of performing a volume management (VM) write input/output (I/O) operation at a host device connected to one or more solid state drives (SSDs), the method comprising:
computing a volume address base and a volume address offset based on a volume block table in a non-volatile random-access memory (NVRAM) of the host device to identify an exact page address in the one or more SSDs for writing data;
retrieving a physical logical block address from the volume block table in the NVRAM;
verifying whether the physical logical block address is valid;
obtaining a free page for writing the data and updating an associated physical logical block address in a metadata log of the one or more SSDs based on verifying that the physical logical block address is valid; and
providing access to disks of the one or more SSDs for:
writing the data as written data; and
creating or modifying at least one of a virtual logical block address or the physical logical block address of the free page in the metadata log of the one or more SSDs corresponding to the written data.