| CPC G05D 7/0126 (2013.01) [F16K 27/003 (2013.01); G01F 1/6842 (2013.01); G01F 1/6847 (2013.01); G01F 15/002 (2013.01); G05D 7/0635 (2013.01); G05D 7/0682 (2013.01)] | 20 Claims |

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1. A method of manufacturing a semiconductor device, the method comprising:
a) supplying a gas to a gas inlet of a gas flow control apparatus, the gas flow control apparatus comprising:
a gas flow path extending from the gas inlet to a gas outlet;
a proportional valve operably coupled to the gas flow path;
an on/off valve operably coupled to the gas flow path between the proportional valve and the gas outlet, a volume of the gas flow path being defined between the proportional valve and the on/off valve; and
a flow restrictor having a flow impedance operably coupled to the gas flow path and located between the proportional valve and the gas outlet;
b) pressurizing the volume with the gas to a target pre-flow pressure by opening the proportional valve while the on/off valve is in an off-state, the target pre-flow pressure selected, in view of the flow impedance of the flow restrictor, to achieve the predetermined flow rate;
c) opening the on/off valve by moving the on/off valve to an on-state, thereby delivering the gas to the gas outlet at the predetermined flow rate; and
d) flowing the gas from the gas outlet to a semiconductor manufacturing process.
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