US 12,411,410 B2
Ultrathin film shadow mask for lithography and lithography method using the same
Seok Kim, Pohang-si (KR); and Sangyeop Lee, Pohang-si (KR)
Assigned to POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION, Pohang-si (KR)
Filed by POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION, Pohang-si (KR)
Filed on Dec. 19, 2023, as Appl. No. 18/544,920.
Claims priority of application No. 10-2023-0102200 (KR), filed on Aug. 4, 2023.
Prior Publication US 2025/0044698 A1, Feb. 6, 2025
Int. Cl. G03F 7/12 (2006.01); B41N 1/24 (2006.01); G03F 7/00 (2006.01)
CPC G03F 7/12 (2013.01) [B41N 1/248 (2013.01); G03F 7/0002 (2013.01); G03F 7/0035 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A lithography method using an ultrathin film shadow mask, comprising:
picking up a flexible ultrathin film shadow mask with a stamp;
aligning the ultrathin film shadow mask on a substrate;
seating the ultrathin film shadow mask on the substrate;
separating the stamp from the ultrathin film shadow mask;
performing an ion injection, deposition, spin coating, or etching process on the substrate;
attaching the ultrathin film shadow mask with the stamp; and
removing the ultrathin film shadow mask from the substrate.