US 12,411,173 B2
Multi-order optical modulator and modulation method for on-chip optical matrix calculation
Zhaohui Li, Guangdong (CN); Yuhang Wei, Guangdong (CN); Siqing Zeng, Guangdong (CN); and Yan Li, Guangdong (CN)
Assigned to SUN YAT-SEN UNIVERSITY, Guangdong (CN)
Filed by SUN YAT-SEN UNIVERSITY, Guangdong (CN)
Filed on Dec. 8, 2023, as Appl. No. 18/533,207.
Claims priority of application No. 202310437181.3 (CN), filed on Apr. 23, 2023.
Prior Publication US 2024/0353487 A1, Oct. 24, 2024
Int. Cl. G01R 31/317 (2006.01); G02F 1/01 (2006.01)
CPC G01R 31/31728 (2013.01) [G02F 1/011 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A multi-order optical modulator for on-chip optical matrix calculation, comprising:
input waveguides, a 2×2 optical beam splitter, initial phase modulators, multi-order phase modulators, a 2×2 optical beam combiner, and an output waveguide;
wherein the input waveguides comprise a first input waveguide and a second input waveguide, and the first input waveguide and the second input waveguide are respectively connected to two input ports of the 2×2 optical beam splitter for being connected to optical fibers or input waveguides of other on-chip structures;
the initial phase modulators comprise a first initial phase modulator and a second initial phase modulator which are respectively connected to two output ports of the 2×2 optical beam splitter; the multi-order phase modulators comprise a first multi-order phase modulator and a second multi-order phase modulator, and the first multi-order phase modulator and the second multi-order phase modulator are respectively connected to the first initial phase modulator and the second initial phase modulator;
two input ends of the 2×2 optical beam combiner are respectively connected to the first multi-order phase modulator and the second multi-order phase modulator, and the 2×2 optical beam combiner is connected to the output waveguide;
each of the initial phase modulators is formed by covering a silicon waveguide with a chalcogenide thin film of a fixed length, an upper layer of the chalcogenide thin film is covered with an aluminium oxide protective layer and a conductive thin film layer, and two sides of the chalcogenide thin film are covered with metal electrodes; and
a micro-heater is formed by the metal electrodes and the conductive thin film layer, and an electrical pulse is applied to perform crystallization and de-crystallization operation on the chalcogenide thin film.