| CPC C23C 16/482 (2013.01) [C23C 16/0227 (2013.01); C23C 16/34 (2013.01); C23C 16/45525 (2013.01); H01L 21/0206 (2013.01); H01L 21/02277 (2013.01)] | 21 Claims |
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1. A method, comprising:
positioning a substrate within a processing chamber, the substrate comprising a first low-k film having a first water contact angle, the first low-k film disposed over an interconnect structure;
cleaning the substrate within the processing chamber to form a cleaned substrate, the cleaned substrate comprising a damaged low-k film having a second water contact angle and the damaged low-k film is a product of the first low-k film;
exposing the cleaned substrate to a recovery precursor to form a recovered substrate, the recovered substrate comprising a recovered low-k film and the recovered low-k film is a product of the damaged low-k film;
exposing the recovered substrate to a UV light source to form a treated substrate, the treated substrate comprising a treated low-k film having a third water contact angle and the treated low-k film is a product of the recovered low-k film, wherein each of the first low-k film and the treated low-k film independently comprise a k value and the k value of the first low-k film is less than the k value of the treated low-k film; and
depositing a liner layer over the treated substrate via atomic layer deposition (ALD).
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