| CPC C23C 16/407 (2013.01) [C23C 16/45553 (2013.01)] | 3 Claims |
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1. A chemical vapor deposition source material used in production of a film containing indium and one or more of the other metals, comprising:
a compound represented by the following general formula (1) or (2),
one or more compounds represented by the following general formulae (3) to (6), and
a solvent,
wherein the chemical vapor deposition source material comprises not less than 0.1 mol of the one or more compounds represented by the following general formulae (3) to (6) on the 100 mol basis of the compound represented by the following general formula (1) or (2), and
wherein the total concentration of the compound represented by the general formula (1) or (2), and the one or more of the compounds represented by the general formulae (3) to (6) is 0.01 wt % or more:
In(C5H4R) (1)
In(C5(CH3)4R) (2)
M1(C5H4R) (3)
M2(C5H4R)n (4)
M1(C5(CH3)4R) (5)
M2(C5(CH3)4R)n (6)
in the general formulae (1) to (6), each R is independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, in the general formulae (3) and (5), M1 is a metal excluding indium, in the general formulae (4) and (6), M2 is a metal excluding indium, and n is an integer of 2 to 4.
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