US 12,410,368 B2
Etching gas composition, substrate processing apparatus, and pattern forming method using the etching gas composition
Kyungseok Min, Suwon-si (KR); Sukjune An, Seongnam-si (KR); and Donggung Shin, Cheonan-si (KR)
Assigned to SEMES CO., LTD., Chungcheongnam-Do (KR)
Filed by SEMES CO., LTD., Chungcheongnam-do (KR)
Filed on Jun. 16, 2023, as Appl. No. 18/336,070.
Claims priority of application No. 10-2022-0075692 (KR), filed on Jun. 21, 2022.
Prior Publication US 2023/0407179 A1, Dec. 21, 2023
Int. Cl. C09K 13/12 (2006.01)
CPC C09K 13/12 (2013.01) 18 Claims
OG exemplary drawing
 
1. An etching gas composition comprising:
at least two C3 or C4 organic fluorine compounds; and
niobium fluoride,
wherein the at least two C3 or C4 organic fluorine compounds are isomers, and wherein the niobium fluoride is included in an amount of about 1 part by volume to about 5 parts by volume based on 100 parts by volume of the etching gas composition.