US 12,410,201 B2
Silicon precursor compound, silicon-containing film formation composition comprising same, and method for forming film by using silicon-containing film formation composition
Byung Kwan Kim, Pyeongtaek-si (KR); Jin Sik Kim, Pyeongtaek-si (KR); and Da Som Yu, Pyeongtaek-si (KR)
Assigned to UP CHEMICAL CO., LTD., Pyeongtaek-si (KR)
Appl. No. 18/579,015
Filed by UP CHEMICAL CO., LTD., Pyeongtaek-si (KR)
PCT Filed Jul. 13, 2022, PCT No. PCT/KR2022/010214
§ 371(c)(1), (2) Date Jan. 12, 2024,
PCT Pub. No. WO2023/287196, PCT Pub. Date Jan. 19, 2023.
Claims priority of application No. 10-2021-0093732 (KR), filed on Jul. 16, 2021.
Prior Publication US 2024/0383927 A1, Nov. 21, 2024
Int. Cl. C07F 7/10 (2006.01); C23C 16/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01)
CPC C07F 7/10 (2013.01) [C23C 16/0227 (2013.01); C23C 16/402 (2013.01); C23C 16/45553 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A silicon precursor compound represented by the following Formula I-a:

OG Complex Work Unit Chemistry
in Formula I-a, n is 0 or 1, R1 is hydrogen, R2 is independently selected from the group consisting of hydrogen, —SiH3, a linear or branched C1-C4 alkyl group, and —N(RaRb), wherein Rª and Rb are each independently selected from the group consisting of a linear or branched C1-C4 alkyl group, and R3 to R14 are each independently selected from the group consisting of hydrogen and a linear or branched C1-C4 alkyl group, provided that at least one of R3 to R5 is not hydrogen; and that at least one of R6 to R8 is not hydrogen.