US 12,409,644 B2
Substrate bonding method and substrate bonding system
Akira Yamauchi, Kyoto (JP); and Tadatomo Suga, Tokyo (JP)
Assigned to Tadatomo Suga, Tokyo (JP); and BONDTECH CO., LTD., Kyoto (JP)
Appl. No. 18/245,895
Filed by BONDTECH CO., LTD., Kyoto (JP); and Tadatomo Suga, Tokyo (JP)
PCT Filed Sep. 10, 2021, PCT No. PCT/JP2021/033291
§ 371(c)(1), (2) Date Mar. 19, 2023,
PCT Pub. No. WO2022/070835, PCT Pub. Date Apr. 7, 2022.
Claims priority of application No. 2020-164962 (JP), filed on Sep. 30, 2020.
Prior Publication US 2024/0009984 A1, Jan. 11, 2024
Int. Cl. B32B 37/12 (2006.01); B32B 37/10 (2006.01); B32B 38/10 (2006.01)
CPC B32B 37/12 (2013.01) [B32B 37/10 (2013.01); B32B 38/10 (2013.01); B32B 2309/04 (2013.01); B32B 2309/12 (2013.01); B32B 2310/0881 (2013.01); B32B 2310/14 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A substrate bonding method for bonding two substrates formed of an insulating material containing no metallic element, the method comprising:
an activation treatment step of, by subjecting at least one of bonding surfaces to be bonded to each other of respective ones of the two substrates to at least one of etching treatment using nitrogen gas and irradiation of nitrogen radicals, bringing the bonding surface into a state where a nitrogen oxide has been formed thereon;
a gas exposure step of, after the activation treatment step, by exposing the bonding surfaces of the two substrates to gas containing water within a preset standard time less than 10 min during which the state does not disappear, replacing the nitrogen oxide by OH groups; and
a bonding step of bonding the two substrates that have the bonding surfaces on which the OH groups exist through the activation treatment step.