| CPC B32B 27/16 (2013.01) [B05D 1/265 (2013.01); B32B 5/16 (2013.01); B32B 9/005 (2013.01); B32B 9/045 (2013.01); B32B 23/12 (2013.01); B32B 27/14 (2013.01); B32B 27/281 (2013.01); B32B 27/285 (2013.01); B32B 27/286 (2013.01); B32B 27/306 (2013.01); B32B 27/308 (2013.01); B32B 27/32 (2013.01); B32B 27/36 (2013.01); B32B 27/365 (2013.01); B32B 27/40 (2013.01); C01G 41/02 (2013.01); C03C 17/3417 (2013.01); G02F 1/1524 (2019.01); G02F 1/153 (2013.01); B32B 2250/05 (2013.01); B32B 2250/40 (2013.01); B32B 2255/10 (2013.01); B32B 2255/20 (2013.01); B32B 2255/205 (2013.01); B32B 2264/102 (2013.01); B32B 2307/20 (2013.01); B32B 2307/40 (2013.01); B32B 2307/402 (2013.01); B32B 2307/412 (2013.01); B32B 2551/08 (2013.01); B32B 2605/006 (2013.01); G02F 1/155 (2013.01); G02F 2202/36 (2013.01)] | 19 Claims |

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1. An electrochromic multi-layer stack comprising:
a substrate comprising a material with a melting point, a glass transition temperature, or a softening point less than 400° C.;
an electrically conductive layer on the substrate; and
an electrochromic cathode layer on the electrically conductive layer, wherein the electrochromic cathode layer comprises crystalline tungsten trioxide nanostructures, wherein the crystalline tungsten trioxide nanostructures have a mean size or a median size from 50 nm to 300 nm.
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