US 12,409,470 B2
Substrate processing apparatus and substrate processing method
Teruhiko Kodama, Kumamoto (JP); Koichi Matsunaga, Kumamoto (JP); and Hideaki Iwasaka, Kumamoto (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Appl. No. 18/282,025
Filed by Tokyo Electron Limited, Tokyo (JP)
PCT Filed Mar. 1, 2022, PCT No. PCT/JP2022/008510
§ 371(c)(1), (2) Date Sep. 14, 2023,
PCT Pub. No. WO2022/196336, PCT Pub. Date Sep. 22, 2022.
Claims priority of application No. 2021-041053 (JP), filed on Mar. 15, 2021.
Prior Publication US 2024/0189856 A1, Jun. 13, 2024
Int. Cl. B05D 5/08 (2006.01); B05C 9/14 (2006.01); B05C 15/00 (2006.01); B05D 3/02 (2006.01); B05D 3/04 (2006.01)
CPC B05C 9/14 (2013.01) [B05C 15/00 (2013.01); B05D 3/02 (2013.01); B05D 3/0466 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A substrate processing apparatus that forms a friction reducing film on a rear surface of a substrate, the apparatus comprising:
a processing container configured to accommodate the substrate therein and to define a hermetically-sealed processing space;
a heating element configured to heat the rear surface of the substrate inside the processing container;
a supplier configured to supply a material that forms the friction reducing film toward the rear surface of the substrate inside the processing container;
a first gas supplier configured to supply an inert gas to a peripheral edge of the substrate from a space above the substrate inside the processing container;
a second gas supplier configured to supply the inert gas closer to a center of the substrate than the first gas supplier from a space above the substrate inside the processing; and
an exhauster configured to exhaust an atmosphere of the processing space from a periphery of the substrate or a space below the substrate inside the processing container.